IXFP12N65X2
Transistors (BJT/MOSFET)
Manufacturer
MPN
IXFP12N65X2
Product Type
Package / Case
TO-220
Datasheet
Key Attributes
MOSFET N-CH 650V TO-220
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 650 V |
| Continuous Drain Current | 12 A |
| Pd W | 180 W |
| Rds On Ohm | 310mΩ |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.134nF |
| Operating Temperature | -55°C~+150°C |
| Gate Charge C | 18.5nC@10V |
| Package / Case | TO-220 |
Features
- International Standard Packages
- Low RDS(ON) and QG
- Avalanche Rated
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings
Applications
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- PFC Circuits
- AC and DC Motor Drives
- Robotics and Servo Controls
Datasheet
Alternative Parts
Common IXFP12N65X2 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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