VBM165R12S
Transistors (BJT/MOSFET)
Manufacturer
VBsemi ElecAsian Brands
MPN
VBM165R12S
Product Type
Package / Case
TO-220AB
Datasheet
Key Attributes
MOSFET N-CH 650V 12A TO-220AB
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 650 V |
| Continuous Drain Current | 12 A |
| Chan Type | N-Channel |
| Pd W | 210 W |
| Output Capacitance(Coss) | 80pF |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.1nF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 360mOhm@10V |
| Gate Charge C | 70nC@10V |
| Type | N-Channel |
| Package / Case | TO-220AB |
Features
- Low figure-of-merit (FOM) R_on×Q_g
- Low input capacitance (C_iss)
- Reduced switching and conduction losses
- Ultra low gate charge (Q_g)
- Avalanche energy rated (UIS)
Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
Datasheet
Alternative Parts
Common VBM165R12S alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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