STMicroelectronics

STP15N80K5

Transistors (BJT/MOSFET)

Manufacturer
MPN
STP15N80K5
Package / Case
TO-220
Key Attributes
MOSFET N-CH 800V 14A TO-220

Technical Specifications

TypeDescription
Drain-Source Voltage800 V
Continuous Drain Current14 A
Chan TypeN-Channel
Pd W190 W
Output Capacitance(Coss)85pF
Configuration-
Gate Threshold Voltage (Vgs(th))5V
Reverse Transfer Capacitance (Crss@Vds)1.5pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)1.1nF
Vgs±30V
Operating Temperature-55°C~+150°C
Rds On Ohm375mOhm@10V
Gate Charge C32nC@10V
TypeN-Channel
Package / CaseTO-220

Product Introduction

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested Zener-protected

Applications

  • Switching applications

Datasheet

📄 Open Download

Alternative Parts

Common STP15N80K5 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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