STP23N80K5
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 800 V |
| Continuous Drain Current | 16 A |
| Chan Type | N-Channel |
| Pd W | 190 W |
| Output Capacitance(Coss) | 65pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
| Vgs | ±30V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 280mOhm@10V |
| Gate Charge C | 33nC@10V |
| Type | N-Channel |
| Package / Case | TO-220 |
Product Introduction
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge 100% avalanche tested Zener-protected
Applications
- Switching applications
Datasheet
Alternative Parts
Common STP23N80K5 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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