VBsemi Elec

IPP65R190CFD-VB

Transistors (BJT/MOSFET)

Manufacturer
VBsemi ElecAsian Brands
MPN
IPP65R190CFD-VB
Product Type
Semiconductors & Discrete
Package / Case
TO-220AB
Datasheet
IPP65R190CFD-VB Datasheet
Key Attributes
MOSFET N-CH 650V 20A TO-220AB

Technical Specifications

TypeDescription
Drain-Source Voltage650 V
Continuous Drain Current20 A
Chan TypeN-Channel
Pd W180 W
Output Capacitance(Coss)80pF
Gate Threshold Voltage (Vgs(th))4.5V
Reverse Transfer Capacitance (Crss@Vds)4pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)2.4nF
Operating Temperature-55°C~+150°C
Rds On Ohm160mOhm@10V
Gate Charge C15nC@10V
TypeN-Channel
Package / CaseTO-220AB

Features

  • Low figure-of-merit (FOM) R_on×Q_g
  • Low input capacitance (C_iss)
  • Reduced switching and conduction losses
  • Ultra low gate charge (Q_g)
  • Avalanche energy rated (UIS)

Applications

  • Server and telecom power supplies
  • Switch mode power supplies (SMPS)
  • Power factor correction power supplies (PFC)
  • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
  • Industrial

Datasheet

📄 Open Download

Alternative Parts

Common IPP65R190CFD-VB alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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