ISC017N04NM5ATMA1
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 193 A |
| Chan Type | N-Channel |
| Pd W | 115 W |
| Output Capacitance(Coss) | 2.2nF |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.8nF |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 1.7mOhm@10V |
| Gate Charge C | 67nC@10V |
| Type | N-Channel |
| Package / Case | TDSON-8FL |
Product Introduction
This single N-channel MOSFET is designed using Fairchild Semiconductor's advanced Power Trench® process, optimized for drain-to-source on-resistance (rDS(ON)) at a gate-to-source voltage (VGS) = 1.5 V on a special MicroFET lead frame.
Features
- Battery powered application
- LV motor drives
- Very low on-resistance RDS(on)
- 100% avalanche tested
- Superior thermal resistance
- N-channel
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- 175 °C rated
Applications
- Lithium-ion battery pack
- Buck DC-DC converter
Datasheet
Alternative Parts
Common ISC017N04NM5ATMA1 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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