Infineon Technologies

ISC018N08NM6ATMA1

Single FETs, MOSFETs

MPN
ISC018N08NM6ATMA1
Package / Case
PG-TDSON-8FL

Technical Specifications

TypeDescription
Drain-Source Voltage80 V
Continuous Drain Current230 A
Chan TypeN-Channel
Pd W217 W
Rds On Ohm0.002 Ω
Gate Charge C63.0
Configuration-
Gate Threshold Voltage (Vgs(th))3V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)37pF
Number1 N-channel
Input Capacitance(Ciss)4.5nF
Vgs+/-20V
Output Cap Coss1.5000000000000002e-09
Operating Temp-55°C ~ +175°C
TypeN-Channel
Package / CasePG-TDSON-8FL

Product Introduction

217W 80V 230A 3V 1.5mΩ@10V 1 N-channel N-Channel PG-TDSON-8FL Single FETs, MOSFETs RoHS

Features

  • N-channel, normally-on
  • Ultra-low on-resistance RDS(on)
  • Excellent gate charge × RDS(on) product (figure of merit FOM)
  • Ultra-low reverse recovery charge (Qrr)
  • Lead-free lead plating; RoHS compliant
  • Halogen-free per IEC61249-2-21
  • Ideal for high-frequency switching and synchronous rectification
  • Operating temperature up to 175°C
  • High avalanche energy rating

Datasheet

📄 Open Download

Alternative Parts

Common ISC018N08NM6ATMA1 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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