ISC022N10NM6ATMA1
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 230 A |
| Pd W | 254 W |
| Rds On Ohm | 0.002 Ω |
| Gate Charge C | 91.0 |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.88nF |
| Operating Temp | -55°C ~ +175°C |
| Package / Case | TSON-8 |
Product Introduction
This MOSFET is designed to meet the stringent requirements of automotive applications. AEC-Q101 qualified and PPAP supported, it is ideally suited for: high-frequency switching, synchronous rectification, and DC-DC converters.
Features
- N-channel, normal level
- Very low on-resistance RDS(on)
- Excellent gate charge × RDS(on) product (FOM)
- Very low reverse recovery charge (Qrr)
- High avalanche energy rating
- 175°C operating temperature
- Optimized for high frequency switching and synchronous rectification
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- MSL 1 classified according to J-STD-020
Applications
- - High-frequency switching synchronous rectification DC-DC converter
Datasheet
Alternative Parts
Common ISC022N10NM6ATMA1 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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