Infineon Technologies

ISC015N04NM5ATMA1

Transistors (BJT/MOSFET)

MPN
ISC015N04NM5ATMA1
Package / Case
TDSON-8FL
Key Attributes
MOSFET N-CH 40V 206A TDSON-8FL

Technical Specifications

TypeDescription
Drain-Source Voltage40 V
Continuous Drain Current206 A
Chan TypeN-Channel
Pd W115 W
Output Capacitance(Coss)2.2nF
Gate Threshold Voltage (Vgs(th))3.4V
Reverse Transfer Capacitance (Crss@Vds)230pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)4.8nF
Operating Temperature-55°C~+175°C
Rds On Ohm1.5mOhm@10V
Gate Charge C67nC@10V
TypeN-Channel
Package / CaseTDSON-8FL

Features

  • Battery powered application
  • LV motor drives
  • Very low on-resistance RDS(on)
  • 100% avalanche tested
  • Superior thermal resistance
  • N-channel
  • Pb-free lead plating; RoHS compliant
  • Halogen-free according to IEC61249-2-21
  • 175 °C rated

Datasheet

📄 Open Download

Alternative Parts

Common ISC015N04NM5ATMA1 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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