ISC012N04NM6ATMA1
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 232 A |
| Chan Type | N-Channel |
| Pd W | 125 W |
| Rds On Ohm | 0.001 Ω |
| Gate Charge C | 64.0 |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.6nF |
| Operating Temp | -55°C ~ +175°C |
| Output Cap Coss | 1.4e-09 |
| Type | N-Channel |
| Package / Case | TDSON-8FL |
Product Introduction
This P-channel MOSFET is manufactured using the advanced PowerTrench process, which is specially optimized to minimize on-resistance while maintaining low gate charge for superior switching performance. These devices are ideal for portable electronics applications.
Features
- N-channel
- Very low on-resistance Rps(on)
- Superior thermal resistance 100% avalanche tested
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
- Optimized for low voltage drive applications
- Optimized for battery powered applications
- Optimized for synchronous rectification 175°C rated
Applications
- - Load switch - DC/DC conversion - MicroFET 3x1.9
Datasheet
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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