IQE013N04LM6ATMA1
Transistors (BJT/MOSFET)
Manufacturer
MPN
IQE013N04LM6ATMA1
Product Type
Package / Case
TSON-8
Datasheet
Key Attributes
MOSFET N-CH 40V 205A TSON-8
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 205 A |
| Chan Type | N-Channel |
| Pd W | 107 W |
| Output Capacitance(Coss) | 1.2nF |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 1.35mOhm@10V |
| Gate Charge C | 55nC@10V |
| Type | N-Channel |
| Package / Case | TSON-8 |
Features
- Optimized for synchronous rectification
- Very low on-state resistance RDS(on)
- 100% avalanche tested
- Superior thermal resistance
- N-channel, logic level
- Pb-free lead plating; RoHS compliant
- Halogen-free according to IEC61249-2-21
Datasheet
Alternative Parts
Common IQE013N04LM6ATMA1 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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