Infineon Technologies

IPC100N04S5L1R5

Transistors (BJT/MOSFET)

MPN
IPC100N04S5L1R5
Package / Case
TDSON-8
Key Attributes
MOSFET N-CH 40V 400A TDSON-8

Technical Specifications

TypeDescription
Drain-Source Voltage40 V
Continuous Drain Current400 A
Chan TypeN-Channel
Pd W115 W
Output Capacitance(Coss)1.2nF
Configuration-
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)90pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)5.34nF
Vgs±16V
Operating Temperature-55°C~+175°C
Rds On Ohm2.1mOhm@4.5V
Gate Charge C95nC@10V
TypeN-Channel
Package / CaseTDSON-8

Features

  • OptiMOS™ - power MOSFET for automotive applications
  • N-channel - Enhancement mode - Logic Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested

Datasheet

📄 Open Download

Alternative Parts

Common IPC100N04S5L1R5 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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