FDV301N
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 25 V |
| Continuous Drain Current | 0.22 A |
| Chan Type | N-Channel |
| Pd W | 0.35 W |
| Rds On Ohm | 5 Ω |
| Gate Charge C | 700.0 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 1.06V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 1.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.5pF |
| Vgs | +/-8V |
| Output Cap Coss | 6e-12 |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | SOT-23 |
Product Introduction
This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.
Features
- 25 V, 0.22 A continuous, 0.5 A Peak
- RDS(ON) = 5 Ω @ VGS = 2.7 V
- RDS(ON) = 4 Ω @ VGS = 4.5 V
- Very low level gate drive requirements allowing direct operation in 3V circuits
- VGS(th) < 1.06 V
- Gate - Source Zener for ESD ruggedness
- > GKV Human Body Model
- Replace multiple NPN digital transistors with one DMOS FET
Datasheet
Alternative Parts
Common FDV301N alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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