BSS138
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 50 V |
| Continuous Drain Current | 0.22 A |
| Chan Type | N-Channel |
| Pd W | 0.36 W |
| Rds On Ohm | 3.5 Ω |
| Gate Charge C | 2.4 |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 27pF |
| Vgs | +/-20V |
| Output Cap Coss | 1.3e-11 |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | SOT-23 |
Product Introduction
These N-Channel enhancement mode field effect transistors are produced using proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- 0.22 A, 50 V. RDS(ON) = 3.5 Ω @ VGS = 10 V; RDS(ON) = 6.0 Ω @ VGS = 4.5 V
- High density cell design for extremely low RDS(ON)
- Rugged and Reliable
- Compact industry standard SOT - 23 surface mount package
Applications
- - small servo motor control - power MOSFET gate drivers - other switching applications
Datasheet
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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