MDD(Microdiode Semiconductor)

2N7002K

Single FETs, MOSFETs

Manufacturer
MPN
2N7002K
Package / Case
SOT-23
Key Attributes
MOSFET N-CH 60V 300mA SOT-23

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current0.3 A
Pd W0.3 W
Rds On Ohm1.9 Ω
Configuration-
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)4pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)21pF
Operating Temp-40°C ~ +150°C
Output Cap Coss9e-12
Gate Charge C-
Package / CaseSOT-23

Product Introduction

N-Channel 60V 300mA 300mW Surface Mount SOT-23

Features

  • Trench power medium-voltage MOSFET technology
  • Voltage-controlled small-signal switch
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage current
  • ESD protection up to 2KV (Human Body Model HBM)

Applications

  • - Battery-powered systems - Solid-state relays - Direct logic-level interface: TTL/CMOS

Datasheet

📄 Open Download

Alternative Parts

Common 2N7002K alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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