STMicroelectronics

STL210N4LF7AG

Transistors (BJT/MOSFET)

Manufacturer
MPN
STL210N4LF7AG
Package / Case
PowerVDFN-8
Key Attributes
Automotive N-channel 40V, 120A, 1.6mΩ

Technical Specifications

TypeDescription
Drain-Source Voltage40 V
Continuous Drain Current120 A
Chan TypeN-Channel
Pd W150 W
Gate Charge C56 nC
Output Capacitance(Coss)1.165nF
Configuration-
Gate Threshold Voltage (Vgs(th))2.5V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)60pF
Number1 N-channel
Input Capacitance(Ciss)4.21nF
Vgs±20V
Operating Temperature-55°C~+175°C
Rds On Ohm1.6mOhm@10V
TypeN-Channel
Package / CasePowerVDFN-8

Product Introduction

This N-channel power MOSFET features STripFET F7 technology with an advanced trench gate structure, achieving ultra-low on-resistance while reducing internal capacitance and gate charge for faster, more efficient switching operation.

Features

  • AEC-Q101 qualified
  • Among the lowest on-resistance products on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
  • Solderable gull-wing package

Applications

  • Switching applications

Datasheet

📄 Open Download

Alternative Parts

Common STL210N4LF7AG alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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