Infineon Technologies

IAUC120N04S6N013ATMA1

Transistors (BJT/MOSFET)

MPN
IAUC120N04S6N013ATMA1
Package / Case
TDSON-8
Key Attributes
MOSFET N-CH 40V 120A TDSON-8

Technical Specifications

TypeDescription
Drain-Source Voltage40 V
Continuous Drain Current120 A
Chan TypeN-Channel
Pd W115 W
Output Capacitance(Coss)1.001nF
Configuration-
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)66pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)4.26nF
Vgs±20V
Operating Temperature-55°C~+175°C
Rds On Ohm1.9mOhm@7V
Gate Charge C68nC@10V
TypeN-Channel
Package / CaseTDSON-8

Features

  • OptiMOS™ - power MOSFET for automotive applications
  • N-channel - Enhancement mode - Normal Level
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested

Datasheet

📄 Open Download

Alternative Parts

Common IAUC120N04S6N013ATMA1 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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