Infineon Technologies

FF150R12RT4

Transistors (BJT/MOSFET)

MPN
FF150R12RT4
Package / Case
Screw Terminals
Key Attributes
34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode

Technical Specifications

TypeDescription
Pd W790 W
Operating Temperature-40°C~+150°C
Reverse Recovery Time (trr)-
Gate Charge C1.25uC@15V
Td(Off)300ns
Td(On)130ns
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)350pF
TypeDescription
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@5.3mA
Vce Saturation(VCE(sat))2.15V@150A,15V
Collector Cut-Off Current (Ices)-
Switching Energy(Eoff)8.5mJ
Turn-On Energy (Eon)8.5mJ
Input Capacitance(Cies)9.35nF
Output Capacitance(Coes)-
Package / CaseScrew Terminals

Features

  • Extended Operation Temperature Tvj op
  • Low Switching Losses
  • Low VCEsat
  • Tvio p = 150℃
  • VcEsat with positive Temperature Coefficient

Applications

  • High Frequency Switching Application
  • Motor Drives
  • UPS Systems

Datasheet

📄 Open Download

Alternative Parts

Common FF150R12RT4 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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