Infineon Technologies

FZ600R12KE4

Transistors (BJT/MOSFET)

MPN
FZ600R12KE4
Package / Case
Screw Terminals
Key Attributes
62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode

Technical Specifications

TypeDescription
Pd W3000 W
Gate Charge C5.6 nC
Reverse Recovery Time (trr)-
Operating Temperature-40°C~+150°C
Td(Off)610ns
Td(On)240ns
Current - Collector(Ic)600A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)1.7nF
TypeDescription
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.2V@23mA
Vce Saturation(VCE(sat))2.1V@600A,15V
Switching Energy(Eoff)50mJ
Turn-On Energy (Eon)35mJ
Input Capacitance(Cies)42nF
Output Capacitance(Coes)-
Package / CaseScrew Terminals

Features

  • Extended Operation Temperature Tvj op
  • Low Switching Losses
  • Unbeatable Robustness
  • VCEsat with positive Temperature Coefficient
  • Low VCEsat

Applications

  • High Power Converters
  • Motor Drives
  • UPS Systems
  • Wind Turbines

Datasheet

📄 Open Download

Alternative Parts

Common FZ600R12KE4 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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