Bestirpower

BS600HF120B2SDX

Transistors (BJT/MOSFET)

Manufacturer
BestirpowerAsian Brands
MPN
BS600HF120B2SDX
Package / Case
Screw Terminals
Key Attributes
IGBT 1.2kV 800A Screw Terminals

Technical Specifications

TypeDescription
Pd W2142 W
Operating Temperature-40°C~+150°C
Reverse Recovery Time (trr)-
Gate Charge C3.75uC@600A
Td(Off)410ns
Td(On)120ns
Current - Collector(Ic)800A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)450pF
TypeDescription
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.8V@8mA
Vce Saturation(VCE(sat))2V@600A,15V
Collector Cut-Off Current (Ices)-
Switching Energy(Eoff)58.5mJ
Turn-On Energy (Eon)17mJ
Input Capacitance(Cies)62.5nF@25V
Output Capacitance(Coes)-
Package / CaseScrew Terminals

Product Introduction

This IGBT module offers ultra-fast switching speed, suitable for welding, induction heating, UPS, and other high-frequency applications.

Features

  • Positive temperature coefficient of V<sub>CE(sat)</sub>
  • 1200V 600A, V<sub>CE(sat)</sub> (typ.) = 1.65V
  • Low switching losses
  • High current capability
  • Excellent short-circuit withstand capability

Datasheet

📄 Open Download

Compliance & Export Codes

TypeDetails
RoHSROHS
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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