W25Q64JVSSIQ
Memory
Technical Specifications
| Type | Description |
|---|---|
| Maximum Clock Speed | 133 MHz |
| Memory Size | 64Mbit |
| Program / Erase Cycles | 100,000 cycles |
| Data Retention - TDR (Year) | 20 Years |
| Block Erase Time(tBE) | 150ms@(64KB) |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | 3ms |
| Standby Supply Current | 10uA |
| Type | Description |
|---|---|
| Operating Temp | -40°C ~ +85°C |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection |
| Working Voltage V | 3.15 V |
| Interface | SPI |
| Package / Case | SOIC-8-208mil |
| Density | 64 M-bit / 8 MByte |
| Unique ID | 64-bit Unique Serial Number |
| Operating temperature | -40 to +85 (industrial, 'IQ') |
Product Introduction
The W25Q64JV (64M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on 2.7V to 3.6V power supply with current consumption as low as 1μA for power-down.
Applications
- Code shadowing to RAM / XIP execution
- Storing firmware / program code for MCUs
- Data and parameter storage
- Voice / text storage
- System code caching
Datasheet
Alternative Parts
Common W25Q64JVSSIQ alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | 3A991b1a |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Sourcing Information
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