PMV65XP,215
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 20 V |
| Continuous Drain Current | 2.8 A |
| Chan Type | P-Channel |
| Pd W | 0.48 W |
| Output Capacitance(Coss) | 65pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF |
| Type | Description |
|---|---|
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 744pF |
| Vgs | ±12V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 74mOhm@4.5V |
| Gate Charge C | 7.7nC@4.5V |
| Type | P-Channel |
| Package / Case | SOT-23 |
Product Introduction
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
- Low threshold voltage
- Low on-state resistance
- Trench MOSFET technology
Applications
- Low power DC-to-DC converters
- Load switching
- Battery management
- Battery powered portable equipment
Datasheet
Alternative Parts
Common PMV65XP,215 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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