HSS2301B
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 20 V |
| Continuous Drain Current | 3 A |
| Chan Type | P-Channel |
| Pd W | 1 W |
| Output Capacitance(Coss) | 82pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 300mV |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF |
| Type | Description |
|---|---|
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 677pF |
| Vgs | ±12V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 89mOhm@2.5V |
| Gate Charge C | 10.1nC@4.5V |
| Type | P-Channel |
| Package / Case | SOT-23 |
Product Introduction
The HSS2301B is the high cell density trenched Pch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The HSS2301B meet the RoHS and Green Product requirement with full function reliability approved.
Features
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
Datasheet
Alternative Parts
Common HSS2301B alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Need HSS2301B from HUASHUO for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.
When you need HSS2301B, SZ Procure can look into supplier options, confirm current availability, compare sourcing quotes and handle purchasing, pre-shipment inspection and consolidated shipment from Shenzhen.
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