Nexperia

PDTC115EM,315

Single, Pre-Biased Bipolar Transistors

Manufacturer
MPN
PDTC115EM,315
Package / Case
SOT-883-3
Key Attributes
TRANS PREBIAS 50V SOT-883-3

Technical Specifications

TypeDescription
Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO10V
DC Current Gain80
Vce Saturation(VCE(sat))150mV
Current - Collector(Ic)20mA
Output Voltage(VO(on))-
Input Resistor130kOhm
TypeDescription
Resistor Ratio1
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.5V@1mA,0.3V
Operating temperature-65°C ~ +150°C
TypeNPN
Number1 NPN (Pre-Biased)
Pd W0.15 W
Package / CaseSOT-883-3

Product Introduction

NPN resistor equipped transistor (see “Simplified outline, symbol and pinning” for package details).

Features

  • Built-in bias resistors
  • Simplified circuit design
  • Reduction of component count
  • Reduced pick and place costs

Applications

  • - General purpose switching and amplification - Inverter and interface circuits - Circuit driver

Datasheet

📄 Open Download

Alternative Parts

Common PDTC115EM,315 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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