Nexperia

PDTC114YM,315

Single, Pre-Biased Bipolar Transistors

Manufacturer
MPN
PDTC114YM,315
Package / Case
SOT-883-3

Technical Specifications

TypeDescription
Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Vce Saturation(VCE(sat))100mV
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor13kOhm
TypeDescription
Resistor Ratio4.7
Voltage - Input(Max)(VI(off))500mV
Input Voltage (VI(on)@Ic,Vce)1.4V
Operating temperature-65°C ~ +150°C
TypeNPN
Number1 NPN (Pre-Biased)
Pd W0.25 W
Package / CaseSOT-883-3

Product Introduction

NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages.

Features

  • Output current capability up to 100 mA
  • Integrated bias resistors
  • Simplified circuit design
  • Reduced component count
  • Lower assembly cost
  • AEC-Q101 qualified

Applications

  • automotive applications

Datasheet

📄 Open Download

Alternative Parts

Common PDTC114YM,315 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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