Minos

MDT20N06

Single FETs, MOSFETs

Manufacturer
MinosAsian Brands
MPN
MDT20N06
Package / Case
TO-252
Key Attributes
MOSFET N-CH 60V 20A TO-252

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current20 A
Pd W44 W
Rds On Ohm0.04 Ω
Gate Charge C21.0
Gate Threshold Voltage (Vgs(th))1.3V
TypeDescription
Reverse Transfer Capacitance (Crss@Vds)66pF
Number1 N-channel
Input Capacitance(Ciss)670pF
Operating Temp-55°C ~ +175°C
Package / CaseTO-252

Product Introduction

The MDT20N06 utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, suitable for a wide range of applications.

Features

  • VDS: 60 V, ID: 20 A
  • RDS(ON): < 35 mΩ (at VGS = 10 V)
  • Special process technology with high ESD immunity
  • High-density cell design for ultra-low RDS(ON)
  • Avalanche voltage and current fully characterized
  • Excellent stability and consistency under high EAS conditions
  • Superior package design with excellent thermal dissipation

Applications

  • - Power switch applications - Hard switching and high-frequency circuits - Uninterruptible power supplies

Datasheet

📄 Open Download

Alternative Parts

Common MDT20N06 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
ECCN-
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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Our Shenzhen sourcing team can help with supplier sourcing, availability checks and quotation comparison for MDT20N06, then coordinate procurement, supplier screening, inspection and international shipping based on what you need.

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