MDT30N06L
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 30 A |
| Pd W | 44 W |
| Rds On Ohm | 0.04 Ω |
| Gate Charge C | 21.0 |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 670pF |
| Operating Temp | -55°C ~ +175°C |
| Package / Case | TO-252 |
Product Introduction
The MDT30N06L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Features
- VDS = 60V, ID = 30A
- RDS(ON) < 30mΩ @ VGS = 10V
- RDS(ON) < 40mΩ @ VGS = 4.5V
- High density cell design for lower Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Applications
- - Power switching application - Hard switched and High frequency circuits - Uninterruptible power supply
Datasheet
Alternative Parts
Common MDT30N06L alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| Type | Details |
|---|---|
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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Our Shenzhen sourcing team can help with supplier sourcing, availability checks and quotation comparison for MDT30N06L, then coordinate procurement, supplier screening, inspection and international shipping based on what you need.
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