MBRS140T3G
Diodes
Technical Specifications
| Type | Description |
|---|---|
| Diode Configuration | 1 Independent |
| Forward Current | 1 A |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Operating Junction Temp | -65°C~+125°C |
| Type | Description |
|---|---|
| Forward Voltage | 600mV@1A |
| Reverse Leakage Current (Ir) | 1mA@40V |
| Surge Current | 40A |
| Package / Case | SMB(DO-214AA) |
Product Introduction
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
- Small Compact Surface Mountable Package with J-Bend Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop (0.55VMax@1.0A, Tj = 25℃)
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guardring for Stress Protection
- ESD Ratings: Human Body Model = 3B (>8000 V) Machine Model = C (>400 V)
- SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These are Pb-Free Devices
Datasheet
Alternative Parts
Common MBRS140T3G alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
Sourcing Information
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