IXTQ69N30P
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 300 V |
| Continuous Drain Current | 69 A |
| Chan Type | N-Channel |
| Pd W | 500 W |
| Rds On Ohm | 0.049 Ω |
| Gate Charge C | 180.0 |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.96nF |
| Operating Temp | -55°C ~ +150°C |
| Output Cap Coss | 7.6e-10 |
| Type | N-Channel |
| Package / Case | TO-3P |
Product Introduction
N-Channel 300V 69A 500W Through Hole TO-3P
Features
- International Standard Packages
- Fast Intrinsic Diode
- Avalanche Rated
- Low RDS(ON) and QG
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings
Applications
- - DC-DC Coverters - Battery Chargers - Switch-Mode and Resonant-Mode Power Supplies - DC Choppers - AC and DC Motor Drives - Uninterrupted Power Supplies - High Speed Power Switching Applications
Datasheet
Datasheet is available on request. Send the part number and our team will provide the official documentation.
Alternative Parts
Common IXTQ69N30P alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Sourcing IXTQ69N30P from China? SZ Procure helps international buyers navigate the Shenzhen electronics market and locate suitable supplier options for specific component requirements.
For IXTQ69N30P, we can check current supplier availability, compare quotations from multiple sources, coordinate purchasing, and arrange pre-shipment inspection and shipment consolidation according to your requirements.
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