IXTP2R4N120P
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 1.2 V |
| Continuous Drain Current | 2.4 A |
| Chan Type | N-Channel |
| Pd W | 125 W |
| Rds On Ohm | 7.5 Ω |
| Gate Charge C | 37.0 |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.207nF |
| Operating Temp | -55°C ~ +150°C |
| Output Cap Coss | 5.7e-11 |
| Type | N-Channel |
| Package / Case | TO-220 |
Product Introduction
These N-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.
Features
- International standard package
- Low gate charge (QG)
- Avalanche rated
- Low package inductance
- Fast intrinsic rectifier
- High power density
- Easy to install
- Space-saving
Applications
- - DC-DC converters - Switched-mode and resonant-mode power supplies - AC and DC motor drives - Discharge circuits in lasers, spark igniters, and RF generators - High-voltage pulsed power applications
Datasheet
Alternative Parts
Common IXTP2R4N120P alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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