IXFP3N120
Single FETs, MOSFETs
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 1.2 V |
| Continuous Drain Current | 3 A |
| Chan Type | N-Channel |
| Pd W | 200 W |
| Rds On Ohm | 4.5 Ω |
| Gate Charge C | 39.0 |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.05nF |
| Operating Temp | -55°C ~ +150°C |
| Type | N-Channel |
| Package / Case | TO-220-3 |
Product Introduction
IRF720, IRF721, IRF722, and IRF723 are n-channel enhancement-mode silicon-gate power MOSFETs. The IRF720R, IRF721R, IRF722R, and IRF723R types are advanced power MOSFETs designed, tested, and guaranteed to withstand specified levels of energy in the avalanche breakdown mode. All of these power MOSFETs are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These types can be driven directly by ICs.
The IRF series is available in the JEDEC TO-220AB plastic package.
Features
- Low gate charge and capacitance
- Easy to drive
- Fast switching speed
- Industry-standard package
- Low on-resistance RDS(on)
- Rated for unclamped inductive switching (UIS)
- Molding compound meets UL 94 V-0 flammability rating
- Easy to mount
- Space-saving
- High power density
Datasheet
Alternative Parts
Common IXFP3N120 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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