IXFN38N100Q2
Transistors (BJT/MOSFET)
Manufacturer
MPN
IXFN38N100Q2
Product Type
Package / Case
SOT-227B
Datasheet
Key Attributes
MOSFET N-CH 1kV 38A SOT-227B
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 1 V |
| Continuous Drain Current | 38 A |
| Pd W | 890 W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| Number | 1 N-channel |
| Type | Description |
|---|---|
| Input Capacitance(Ciss) | 7.2nF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 250mOhm@10V |
| Gate Charge C | 250nC@10V |
| Package / Case | SOT-227B |
Features
- Double metal process for low gate resistance
- miniBLOC, with Aluminium nitride isolation
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- Fast intrinsic Rectifier
Applications
- DC-DC converters
- Switched-mode and resonant-mode power supplies
- DC choppers
- Pulse generators
Datasheet
Alternative Parts
Common IXFN38N100Q2 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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