Littelfuse/IXYS

IXFN52N100X

Transistors (BJT/MOSFET)

Manufacturer
Littelfuse/IXYS
MPN
IXFN52N100X
Product Type
Semiconductors & Discrete
Package / Case
SOT-227B
Datasheet
IXFN52N100X Datasheet
Key Attributes
Number: 1 N-channel
Drain to Source Voltage: 1kV
Current - Continuous Drain(Id): 44A
Pd - Power Dissipation: 830W
Gate Threshold Voltage (Vgs(th)): 6V
RDS(on): 125mΩ@10V

Technical Specifications

TypeDescription
Drain-Source Voltage1 V
Continuous Drain Current44 A
Pd W830 W
Gate Threshold Voltage (Vgs(th))6V
Number1 N-channel
TypeDescription
Input Capacitance(Ciss)6.725nF
Operating Temperature-55°C~+150°C
Rds On Ohm125mOhm@10V
Gate Charge C245nC@10V
Package / CaseSOT-227B

Features

  • Industry-standard package
  • miniBLOC with aluminum nitride isolation
  • Isolation voltage approx. 2500 V
  • Low gate charge (QG)
  • Avalanche-rated
  • Low package inductance
  • High power density
  • Easy to mount
  • Space-saving

Applications

  • Switched-mode and resonant-mode power supplies
  • DC-DC converters
  • Power factor correction (PFC) circuits
  • AC and DC motor drivers
  • Robotics and servo control

Datasheet

📄 Open Download

Alternative Parts

Common IXFN52N100X alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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