IXBH5N160G
Single IGBTs
Manufacturer
MPN
IXBH5N160G
Product Type
Package / Case
TO-247
Datasheet
Key Attributes
High Voltage BIMOSFET
Technical Specifications
| Type | Description |
|---|---|
| Pd W | 68 W |
| Gate Charge C | 26.0 |
| Td(Off) | 200ns |
| Td(On) | 140ns |
| Current - Collector(Ic) | 5.7A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.6kV |
| Reverse Transfer Capacitance (Cres) | - |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@0.3mA |
| Type | Description |
|---|---|
| Vce Saturation(VCE(sat)) | 7.2V@3A,15V |
| Collector Cut-Off Current (Ices) | 50uA |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
| Input Capacitance(Cies) | 325pF |
| Output Capacitance(Coes) | - |
| Operating Temp | -50°C ~ +150°C |
| Trr Ns | - |
| Package / Case | TO-247 |
Product Introduction
68W 5.7A 1.6kV TO-247 Single IGBTs RoHS
Features
- High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage
- fast switching for high frequency operation
- reverse conduction capability
- industry standard package
- TO-220AB
- TO-247AD
- epoxy meets UL94V-0
Applications
- - switched mode power supplies - DC-DC converters - resonant converters - lamp ballasts - laser generators, x ray generators
Datasheet
Alternative Parts
Common IXBH5N160G alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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