IXBH9N160G
Single IGBTs
Technical Specifications
| Type | Description |
|---|---|
| Pd W | 100 W |
| Operating Temp | -55°C ~ +150°C |
| Trr Ns | - |
| Gate Charge C | 34.0 |
| Td(Off) | 120ns |
| Td(On) | 70ns |
| Current - Collector(Ic) | 9A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.6kV |
| Reverse Transfer Capacitance (Cres) | 5pF |
| Type | Description |
|---|---|
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Vce Saturation(VCE(sat)) | 7V@5A,15V |
| Collector Cut-Off Current (Ices) | 100uA |
| Switching Energy(Eoff) | - |
| Turn-On Energy (Eon) | - |
| Input Capacitance(Cies) | 550pF |
| Output Capacitance(Coes) | 36pF |
| Package / Case | TO-247-3 |
Product Introduction
This product is an N-channel enhancement-mode MOSFET transistor with the following key parameters: V_CES = 1600V, I_C25 = 9A, V_CE(sat) ≤ 7.0V, t_fi(typ) = 70ns, housed in a TO-247 package, where G is the gate, C is the collector, E is the emitter, and the heatsink tab is the collector.
Features
- High-voltage package, replaces high-voltage Darlington transistors and series MOSFETs
- Low effective on-resistance R_DSON
- MOS gate turn-on, simple drive, compatible with MOSFETs using 10V gate-on voltage
- Monolithic structure with high blocking voltage capability and very fast turn-off characteristics
- Industry-standard package with reverse conduction capability
- Low gate drive requirements
- High power density
Applications
- - Flyback converters - DC choppers - Uninterruptible power supplies (UPS) - Switched-mode and resonant-mode power supplies - CRT deflection
Datasheet
Alternative Parts
Common IXBH9N160G alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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