ON Semiconductor

IRFM120ATF

Transistors (BJT/MOSFET)

Manufacturer
MPN
IRFM120ATF
Package / Case
SOT-223
Key Attributes
MOSFET N-CH 100V 2.3A SOT-223

Technical Specifications

TypeDescription
Drain-Source Voltage100 V
Continuous Drain Current2.3 A
Chan TypeN-Channel
Pd W2.4 W
Output Capacitance(Coss)110pF
Configuration-
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)45pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)480pF
Vgs±20V
Operating Temperature-55°C~+150°C
Rds On Ohm200mOhm@10V
Gate Charge C22nC@10V
TypeN-Channel
Package / CaseSOT-223

Features

  • IEEE802.3af Compatible
  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Lower Leakage Current: 10 μA (Max.) @ VDS = 100V
  • Lower RDS(ON): 0.155 Ω (Typ.)

Datasheet

📄 Open Download

Alternative Parts

Common IRFM120ATF alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

Need IRFM120ATF from ON Semiconductor for your next order? SZ Procure provides local sourcing support in Shenzhen — we help buyers check supplier availability, compare quotations, and coordinate procurement for China-sourced components.

When you need IRFM120ATF, SZ Procure can look into supplier options, confirm current availability, compare sourcing quotes and handle purchasing, pre-shipment inspection and consolidated shipment from Shenzhen.

Ready to source IRFM120ATF? Send your requirement through Request a Quote and we'll help check sourcing options and procurement costs.