IRFL4310TRPBF
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 2.2 A |
| Chan Type | N-Channel |
| Pd W | 2.1 W |
| Output Capacitance(Coss) | 92pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 330pF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 200mOhm@10V |
| Gate Charge C | 25nC@10V |
| Type | N-Channel |
| Package / Case | SOT-223 |
Product Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Features
- Surface Mount
- Dynamic dv/dt Rating
- Fast Switching
- Ease of Paralleling
- Advanced Process Technology
- Ultra Low On-Resistance
- Lead-Free
Datasheet
Alternative Parts
Common IRFL4310TRPBF alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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