IRFB38N20DPBF-VB
Transistors (BJT/MOSFET)
Manufacturer
VBsemi ElecAsian Brands
MPN
IRFB38N20DPBF-VB
Product Type
Package / Case
TO-220AB
Datasheet
Key Attributes
MOSFET N-CH 200V 50A TO-220AB
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 50 A |
| Chan Type | N-Channel |
| Pd W | 166 W |
| Output Capacitance(Coss) | 180pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| Number | 1 N-channel |
| Type | Description |
|---|---|
| Input Capacitance(Ciss) | 3nF |
| Vgs | ±25V |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 48mOhm@10V |
| Gate Charge C | 51nC@10V |
| Type | N-Channel |
| Package / Case | TO-220AB |
Features
- Trench power MOSFET
- Junction temperature 175 °C
- 100% Rg and UIS tested
- RoHS compliant
Applications
- Power Supply
- Lighting Systems
Datasheet
Alternative Parts
Common IRFB38N20DPBF-VB alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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