VBsemi Elec

SSP45N20B-VB

Transistors (BJT/MOSFET)

Manufacturer
VBsemi ElecAsian Brands
MPN
SSP45N20B-VB
Package / Case
TO-220AB
Key Attributes
MOSFET N-CH 200V 50A TO-220AB

Technical Specifications

TypeDescription
Drain-Source Voltage200 V
Continuous Drain Current50 A
Chan TypeN-Channel
Pd W166 W
Output Capacitance(Coss)180pF
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)80pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)3nF
Operating Temperature-55°C~+175°C
Rds On Ohm48mOhm@10V
Gate Charge C51nC@10V
TypeN-Channel
Package / CaseTO-220AB

Features

  • Trench power MOSFET
  • Junction temperature 175 °C
  • 100% Rg and UIS tested
  • RoHS compliant

Applications

  • Power Supply
  • Lighting Systems

Datasheet

📄 Open Download

Alternative Parts

Common SSP45N20B-VB alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
ECCNEAR99
CNHTS8541290000
USHTS8541290095
TARIC8541290000
TypeDetails
CAHTS8541290000
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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