IRF9952TRPBF
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 30 V |
| Continuous Drain Current | 2.9 A |
| Chan Type | N-Channel + P-Channel |
| Pd W | 2 W |
| Output Capacitance(Coss) | 120pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| Type | Description |
|---|---|
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 190pF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 100mOhm@10V |
| Gate Charge C | 14nC@10V |
| Type | N-Channel + P-Channel |
| Package / Case | SO-8 |
Product Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Features
- Generation V Technology
- Ultra Low On-Resistance
- Dual N and P Channel MOSFET
- Surface Mount
- Very Low Gate Charge and Switching Losses
- Fully Avalanche Rated
- Lead-Free
Datasheet
Alternative Parts
Common IRF9952TRPBF alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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