CMS4612A
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 4.75 A |
| Chan Type | N-Channel + P-Channel |
| Pd W | 2 W |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Type | Description |
|---|---|
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 620pF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 33mOhm@10V |
| Gate Charge C | 15nC@10V |
| Type | N-Channel + P-Channel |
| Package / Case | SOP-8 |
Product Introduction
The CMS4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
- Low On-resistance
- Simple Drive Requirement
- Surface mount Package
- RoHS Compliant
Applications
- DC/DC Converter Power Management
Datasheet
Alternative Parts
Common CMS4612A alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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