Infineon Technologies

IR2104STRPBF

Gate Drivers

MPN
IR2104STRPBF
Product Type
Package / Case
SOIC-8
Key Attributes
HALF-BRIDGE DRIVER

Technical Specifications

TypeDescription
Working Voltage V15 V
Iq A0 A
Input Logic Level - Low-
Low Level Delay Time680ns
High Level Delay Time150ns
Input Logic Level - High-
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)270mA
TypeDescription
Rise Time100ns
Fall Time50ns
Current - Output High(IOH)130mA
Load TypeMOSFET;IGBT
Operating Temp-40°C ~ +150°C
FeaturesEnable shutdown;Dead-time control;Interleaved conduction protection
Package / CaseSOIC-8

Product Introduction

The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.

Features

  • Floating channel designed for bootstrap operation, fully operational to +600V, tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 to 20V
  • Undervoltage lockout
  • 3.3V, 5V and 15V input logic compatible
  • Cross-conduction prevention logic
  • Internally set deadtime
  • High side output in phase with input
  • Shut down input turns off both channels
  • Matched propagation delay for both channels
  • Also available LEAD-FREE

Datasheet

📄 Open Download

Alternative Parts

Common IR2104STRPBF alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8542399000
USHTS8542390001
TARIC8542399000
TypeDetails
CAHTS8542390000
BRHTS85423999
INHTS85423900
MXHTS8542.39.99

Sourcing Information

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