Infineon Technologies

IR2103STRPBF

Gate Drivers

MPN
IR2103STRPBF
Product Type
Package / Case
SOIC-8
Key Attributes
HALF-BRIDGE DRIVER

Technical Specifications

TypeDescription
Working Voltage V15 V
Iq A0 A
Input Logic Level - Low-
Low Level Delay Time680ns
High Level Delay Time150ns
Input Logic Level - High-
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)270mA
TypeDescription
Rise Time100ns
Fall Time50ns
Current - Output High(IOH)130mA
Load TypeMOSFET;IGBT
Operating Temp-40°C ~ +150°C
FeaturesInterleaved conduction protection;Dead-time control
Package / CaseSOIC-8

Product Introduction

The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Features

  • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
  • Gate drive supply range from 10 to 20V
  • Undervoltage lockout
  • 3.3V, 5V and 15V logic compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • Internal set deadtime
  • High side output in phase with HIN input
  • Low side output out of phase with LIN input

Datasheet

Datasheet is available on request. Send the part number and our team will provide the official documentation.

Alternative Parts

Common IR2103STRPBF alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8542399000
USHTS8542390001
TARIC8542399000
TypeDetails
CAHTS8542390000
BRHTS85423999
INHTS85423900
MXHTS8542.39.99

Sourcing Information

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