IKW30N60T
Transistors (BJT/MOSFET)
Manufacturer
MPN
IKW30N60T
Product Type
Package / Case
TO-247
Datasheet
Key Attributes
TrenchStop Series IGBT with anti-parallel EmCon HE diode
Technical Specifications
| Type | Description |
|---|---|
| Pd W | 187 W |
| Operating Temperature | -40°C~+175°C |
| Reverse Recovery Time (trr) | 143ns |
| Gate Charge C | 167nC@15V |
| Td(Off) | 254ns |
| Td(On) | 23ns |
| Current - Collector(Ic) | 60A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 50pF |
| Type | Description |
|---|---|
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.1V@0.43mA |
| Vce Saturation(VCE(sat)) | 2.05V@30A,15V |
| Collector Cut-Off Current (Ices) | - |
| Switching Energy(Eoff) | 770uJ |
| Turn-On Energy (Eon) | 690uJ |
| Input Capacitance(Cies) | 1.63nF |
| Output Capacitance(Coes) | 108pF |
| Package / Case | TO-247 |
Features
- Very low VCE(sat) 1.5 V (typ.)
- Maximum Junction Temperature 175 ℃
- Short circuit withstand time – 5µs
- Trench and Fieldstop technology for 600 V applications offers very tight parameter distribution
- Trench and Fieldstop technology for 600 V applications offers high ruggedness, temperature stable behavior
- Trench and Fieldstop technology for 600 V applications offers very high switching speed
- Trench and Fieldstop technology for 600 V applications offers low VCE(sat)
- Positive temperature coefficient in VCE(sat)
- Low EMI
- Low Gate Charge
- Very soft, fast recovery anti-parallel EmCon HE diode
Applications
- Frequency Converters
- Uninterruptible Power Supply
Datasheet
Alternative Parts
Common IKW30N60T alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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