Infineon Technologies

IGW30N60H3FKSA1

Transistors (BJT/MOSFET)

MPN
IGW30N60H3FKSA1
Package / Case
TO-247-3
Key Attributes
IGBT 600V 60A TO-247-3

Technical Specifications

TypeDescription
Pd W187 W
Operating Temperature-40°C~+175°C@(Tj)
Reverse Recovery Time (trr)-
Gate Charge C165 nC
Td(Off)207ns
Td(On)21ns
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)50pF
TypeDescription
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@0.43mA
Vce Saturation(VCE(sat))2.4V@30A,15V
Collector Cut-Off Current (Ices)-
Switching Energy(Eoff)440uJ
Turn-On Energy (Eon)940uJ
Input Capacitance(Cies)1.63nF
Output Capacitance(Coes)107pF
Package / CaseTO-247-3

Product Introduction

High speed IGBT in Trench and Fieldstop technology

Features

  • TRENCHSTOPTM technology offering
  • very low VCEsat
  • low EMI
  • Very soft, fast recovery anti-parallel diode
  • maximum junction temperature 175℃
  • qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • complete product spectrum and PSpice Models

Applications

  • uninterruptible power supplies
  • welding converters
  • converters with high switching frequency

Datasheet

📄 Open Download

Alternative Parts

Common IGW30N60H3FKSA1 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
RoHSROHS3
ECCNEAR99
CNHTS8541600000
USHTS8541600080
TARIC8541600000
TypeDetails
CAHTS8541600010
BRHTS85416010
INHTS85416000
MXHTS8541.60.01

Sourcing Information

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