MBQ40T65QESTH
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Pd W | 230 W |
| Operating Temperature | -40°C~+175°C |
| Reverse Recovery Time (trr) | 72ns |
| Gate Charge C | 60nC@15V |
| Td(Off) | 55ns |
| Td(On) | 6ns |
| Current - Collector(Ic) | 80A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 37pF |
| Type | Description |
|---|---|
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@40mA |
| Vce Saturation(VCE(sat)) | 2.3V@40A,15V |
| Collector Cut-Off Current (Ices) | - |
| Switching Energy(Eoff) | 400uJ |
| Turn-On Energy (Eon) | 500uJ |
| Input Capacitance(Cies) | 1.565nF |
| Output Capacitance(Coes) | 120pF |
| Package / Case | TO-247 |
Product Introduction
This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching speed and excellent quality.
Features
- High Speed Switching & Low Power Loss
- VCE(sat)=1.8V @ Ic=40A
- Maximum junction temperature 175℃
Applications
- Inverters
- Welding converters
- High range switching frequency converters
Datasheet
Alternative Parts
Common MBQ40T65QESTH alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Sourcing Information
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