IAUZN04S7N013ATMA2
Transistors (BJT/MOSFET)
Manufacturer
MPN
IAUZN04S7N013ATMA2
Product Type
Package / Case
PG-TSDSON-8-39
Datasheet
Key Attributes
Number: 1 N-channel
Type: N-Channel
Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 193A
Pd - Power Dissipation: 94W
Gate Threshold Voltage (Vgs(th)): 2.6V
RDS(on): 1.13mΩ@10V
Type: N-Channel
Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 193A
Pd - Power Dissipation: 94W
Gate Threshold Voltage (Vgs(th)): 2.6V
RDS(on): 1.13mΩ@10V
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 193 A |
| Chan Type | N-Channel |
| Pd W | 94 W |
| Gate Charge C | 37 nC |
| Output Capacitance(Coss) | 1.461nF |
| Configuration | Standalone |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Type | Description |
|---|---|
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.511nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+175°C |
| Rds On Ohm | 1.13mOhm@10V |
| Type | N-Channel |
| Package / Case | PG-TSDSON-8-39 |
Features
- OptiMOS™ Power MOSFET for automotive applications
- N-channel - Enhancement mode - Standard level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 rated for peak reflow temperature up to 260°C
- 175°C operating temperature
- RoHS compliant
- 100% avalanche tested
Applications
- General automotive applications.
Datasheet
Alternative Parts
Common IAUZN04S7N013ATMA2 alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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