HSBA6074B
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 200 A |
| Pd W | 83 W |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Reverse Transfer Capacitance (Crss@Vds) | 108pF |
| Number | 1 N-channel |
| Type | Description |
|---|---|
| Input Capacitance(Ciss) | 5.48nF |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 1.4mOhm@10V |
| Gate Charge C | 107nC@10V |
| Package / Case | PRPAK5x6-8L |
Product Introduction
HSBA6074B is a high cell density SGT N-channel MOSFET offering excellent on-resistance (RDSON) and gate charge for most synchronous buck converter applications. HSBA6074B complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full-function reliability qualification.
Features
- Motor control
- 100% guaranteed avalanche capability (EAS)
- Suitable for DC/DC converters
- Excellent CdV/dt immunity
- Synchronous rectification applications
Datasheet
Alternative Parts
Common HSBA6074B alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
Looking for a reliable source for HSBA6074B from HUASHUO? SZ Procure is a China electronics sourcing partner, helping international buyers source components through our supplier network in Shenzhen.
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