HUASHUO

HSBA6078

Transistors (BJT/MOSFET)

Manufacturer
HUASHUOAsian Brands
MPN
HSBA6078
Package / Case
PRPAK-8(5x6)
Key Attributes
MOSFET N-CH 60V 235A PRPAK-8(5x6)

Technical Specifications

TypeDescription
Drain-Source Voltage60 V
Continuous Drain Current235 A
Chan TypeN-Channel
Pd W125 W
Output Capacitance(Coss)2.422nF
Gate Threshold Voltage (Vgs(th))1.75V
Reverse Transfer Capacitance (Crss@Vds)141pF
TypeDescription
Number1 N-channel
Input Capacitance(Ciss)6.155nF
Operating Temperature-55°C~+150°C
Rds On Ohm1.1mOhm@10V
Gate Charge C72nC@4.5V
TypeN-Channel
Package / CasePRPAK-8(5x6)

Product Introduction

100% UIS tested

Advanced SGT MOS technology

Low gate charge

High current capability

RoHS and halogen-free compliant

Features

  • 100% UIS tested
  • Advanced SGT MOS technology
  • Low gate charge
  • High current capability
  • RoHS and halogen-free compliant

Applications

  • Motor control
  • DC/DC converters
  • Synchronous rectification applications

Datasheet

📄 Open Download

Alternative Parts

Common HSBA6078 alternatives overseas buyers search for:

Compliance & Export Codes

TypeDetails
CNHTS8541290000
USHTS8541290095
TARIC8541290000
CAHTS8541290000
TypeDetails
BRHTS85412910
INHTS85412900
MXHTS8541.29.99

Sourcing Information

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