CSD19532Q5B
Transistors (BJT/MOSFET)
Technical Specifications
| Type | Description |
|---|---|
| Drain-Source Voltage | 100 V |
| Continuous Drain Current | 100 A |
| Chan Type | N-Channel |
| Pd W | 195 W |
| Output Capacitance(Coss) | 706pF |
| Configuration | - |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| Type | Description |
|---|---|
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.81nF |
| Vgs | ±20V |
| Operating Temperature | -55°C~+150°C |
| Rds On Ohm | 4.6mOhm@6V |
| Gate Charge C | 48nC@10V |
| Type | N-Channel |
| Package / Case | SON-8(5x6) |
Product Introduction
This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
Features
- Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm×6-mm Plastic Package
Applications
- Synchronous Rectifier for Offline and Isolated DC
- DC Converters
- Motor Control
Datasheet
Alternative Parts
Common CSD19532Q5B alternatives overseas buyers search for:
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Sourcing Information
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